Filament study of STI type drain extended NMOS device using transient interferometric mapping

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-11-03T04:11:59Z	-
dc.date.available	2023-11-03T04:11:59Z	-
dc.date.issued	2009-12	-
dc.identifier.uri	https://ieeexplore.ieee.org/document/5424337	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12833	-
dc.description.abstract	We present filament behavior of STI type DeNMOS devices using detailed Transient Interferometric Mapping experiments and 3D TCAD simulations. Device behavior at different TLP currents is discussed. The impact of localized base-push-out, power dissipation because of space charge build-up, regenerative NPN action and various events during the current filamentation are explored. By uniform turn-on of the device during base push-out the failure current could be improved by more than 2X.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	MOS devices	en_US
dc.subject	Fingers	en_US
dc.subject	Current density	en_US
dc.subject	Electric breakdown	en_US
dc.subject	CMOS technology	en_US
dc.subject	Nanoelectronics	en_US
dc.subject	Current distribution	en_US
dc.subject	Impact ionization	en_US
dc.title	Filament study of STI type drain extended NMOS device using transient interferometric mapping	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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