Highly resistive body STI NDeMOS: An optimized DeMOS device to achieve moving current filaments for robust ESD protection

Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12839

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-11-03T07:11:50Z	-
dc.date.available	2023-11-03T07:11:50Z	-
dc.date.issued	2009	-
dc.identifier.uri	https://ieeexplore.ieee.org/document/5173344	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12839	-
dc.description.abstract	A novel DeMOS device with modified body and source region in grounded gate (gg) NMOS configuration for ESD protection is proposed. Detailed 3D simulations indicate a high failure threshold because of moving current filaments and self-protection from gate oxide breakdown, even for fast transients. A detailed physics of second basepushout and moving filaments is discussed.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	Robustness	en_US
dc.subject	Electrostatic discharges	en_US
dc.subject	Electric breakdown	en_US
dc.subject	Switches	en_US
dc.subject	Stress	en_US
dc.subject	Breakdown voltage	en_US
dc.title	Highly resistive body STI NDeMOS: An optimized DeMOS device to achieve moving current filaments for robust ESD protection	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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