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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12839| Title: | Highly resistive body STI NDeMOS: An optimized DeMOS device to achieve moving current filaments for robust ESD protection |
| Authors: | Rao, V. Ramgopal |
| Keywords: | Robustness Electrostatic discharges Electric breakdown Switches Stress Breakdown voltage |
| Issue Date: | 2009 |
| Publisher: | IEEE |
| Abstract: | A novel DeMOS device with modified body and source region in grounded gate (gg) NMOS configuration for ESD protection is proposed. Detailed 3D simulations indicate a high failure threshold because of moving current filaments and self-protection from gate oxide breakdown, even for fast transients. A detailed physics of second basepushout and moving filaments is discussed. |
| URI: | https://ieeexplore.ieee.org/document/5173344 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12839 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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