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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12842| Title: | Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE Ge pMOSFET Interface trap Oxide trap |
| Issue Date: | Jun-2009 |
| Publisher: | IEEE |
| Abstract: | The interface trap density of fresh TiN/TaN gated HfO 2 /SiO 2 /Si/epi-Ge pMOSFETs is measured using the DCIV technique. Its temperature dependence is also discussed here. We observe a polarity dependent DCIV peak shift. The bias temperature stress induced interface trapped charge and oxide trapped charge shifts are also systematically investigated in this work. |
| URI: | https://ieeexplore.ieee.org/document/5166133 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12842 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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