Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/12847| Title: | Metallated Porphyrin Self Assembled Monolayers as Cu Diffusion Barriers for the Nano-Scale CMOS Technologies |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE Copper Silicon Metallization Gold Substrates |
| Issue Date: | 2008 |
| Publisher: | IEEE |
| Abstract: | In this paper we have studied the application of metallated porphyrin self assembled monolayers (SAMs) as Cu diffusion barriers for ultra-large scale integration (ULSI) CMOS applications. The results for Cu/SiO 2 /Si and Cu/SAM/SiO 2 /Si MOS CAP structures are compared through a detailed electrical characterization of threshold voltage shift using bias-temperature studies. Material characterization and surface morphology is studied using UV absorption spectra and AFM. Our results show that metallated porphyrin SAMs can be effectively used as Cu diffusion barriers for ULSI applications. |
| URI: | https://ieeexplore.ieee.org/document/4617038 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12847 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.