Metallated Porphyrin Self Assembled Monolayers as Cu Diffusion Barriers for the Nano-Scale CMOS Technologies

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-11-03T09:23:43Z	-
dc.date.available	2023-11-03T09:23:43Z	-
dc.date.issued	2008	-
dc.identifier.uri	https://ieeexplore.ieee.org/document/4617038	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12847	-
dc.description.abstract	In this paper we have studied the application of metallated porphyrin self assembled monolayers (SAMs) as Cu diffusion barriers for ultra-large scale integration (ULSI) CMOS applications. The results for Cu/SiO 2 /Si and Cu/SAM/SiO 2 /Si MOS CAP structures are compared through a detailed electrical characterization of threshold voltage shift using bias-temperature studies. Material characterization and surface morphology is studied using UV absorption spectra and AFM. Our results show that metallated porphyrin SAMs can be effectively used as Cu diffusion barriers for ULSI applications.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	Copper	en_US
dc.subject	Silicon	en_US
dc.subject	Metallization	en_US
dc.subject	Gold	en_US
dc.subject	Substrates	en_US
dc.title	Metallated Porphyrin Self Assembled Monolayers as Cu Diffusion Barriers for the Nano-Scale CMOS Technologies	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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