Photoplastic NEMS with an Encapsulated Polysilicon Piezoresistor

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-11-03T09:36:02Z	-
dc.date.available	2023-11-03T09:36:02Z	-
dc.date.issued	2008	-
dc.identifier.uri	https://ieeexplore.ieee.org/document/4617122	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12848	-
dc.description.abstract	We demonstrate a photoplastic NEMS device that has an encapsulated polysilicon piezoresistor. The crucial temperature limitation of depositing a polysilicon film on a polymer was overcome by employing a novel Hotwire CVD process. In this paper, we report the fabrication and characterization of a novel polymeric cantilever with an embedded piezoresistor, which exploits the low Youngs modulus of a polymer and high gauge factor of polysilicon. Such devices are widely used for sensing biochemicals.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	Electrical resistance measurement	en_US
dc.subject	Substrates	en_US
dc.subject	Polymers	en_US
dc.subject	Voltage measurement	en_US
dc.subject	Distance measurement	en_US
dc.title	Photoplastic NEMS with an Encapsulated Polysilicon Piezoresistor	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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