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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-11-03T10:44:43Z-
dc.date.available2023-11-03T10:44:43Z-
dc.date.issued2007-
dc.identifier.urihttps://ieeexplore.ieee.org/document/4378107?arnumber=4378107&tag=1-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12852-
dc.description.abstractMulti-frequency transconductance technique is successfully applied in this work for the first time for interface characterization of OFETs. Standard charge pumping measurements are used on silicon MOSFETs for the validation of MFT technique. The method is implemented on pentacene as well as the P3HT based OFETs with SiO 2 as the gate dielectric. Our results show interface state densities in the range of 10 12 /cm 2 /eV for both the samples. The P3HT films are also shown to have additional trap centres which respond to frequencies above 100 kHz. Our results therefore clearly indicate that the MFT technique is indeed a highly useful technique for interface characterization of OFETs.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectOrganic field effect transistors (OFETs)en_US
dc.subjectDielectric measurementsen_US
dc.subjectCharge measurementen_US
dc.subjectSiliconen_US
dc.subjectMOSFETsen_US
dc.subjectPentaceneen_US
dc.titleA Simple and Direct Method for Interface Characterization of OFETsen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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