Improving the DC performance of Bulk FinFETs by Optimum Body Doping

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-11-03T11:01:19Z	-
dc.date.available	2023-11-03T11:01:19Z	-
dc.date.issued	2007	-
dc.identifier.uri	https://ieeexplore.ieee.org/document/4378080	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12853	-
dc.description.abstract	It is shown that body doping can be used to match the Bulk FinFETs' DC performance with that of SOI FinFETs, even down to 22 nm technology node, by using calibrated full 3D device simulations. However higher body doping does not necessarily mean better performance always as there is a optimum body doping. The optimum doping should be carefully chosen such that device exhibits no punch through and no BTBT leakage currents. Thus careful body doping optimization is critical for the reliable device operation of novel Bulk FinFET structures.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	FinFETs	en_US
dc.subject	Doping profiles	en_US
dc.subject	Thermal conductivity	en_US
dc.subject	Semiconductor process modeling	en_US
dc.subject	Guidelines	en_US
dc.subject	Quantization	en_US
dc.title	Improving the DC performance of Bulk FinFETs by Optimum Body Doping	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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