The Effects of Varying Tilt Angle of Halo Implant on the Performance of Sub 100nm LAC MOSFETs

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-11-04T04:08:47Z	-
dc.date.available	2023-11-04T04:08:47Z	-
dc.date.issued	2006-08	-
dc.identifier.uri	https://ieeexplore.ieee.org/document/4216567	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12857	-
dc.description.abstract	In this paper we systematically investigate the effects of the varying tilt angle of the halo implants on the different device performance parameters of 100 nm lateral asymmetric channel (LAC) MOSFETs. The tilt angle is varied from 5deg to 60deg with twist angle 0deg. Substantial reduction of sub-threshold swing is found for large tilt angles as compared to low angles of halo implant. The device structure, known as lateral asymmetric channel with large angle tilt implant (LACLATI), exhibits better reverse short channel effect and I on /I off , and lower junction capacitance	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	Implants	en_US
dc.subject	Los Angeles Council	en_US
dc.subject	MOSFETs	en_US
dc.subject	Threshold voltage	en_US
dc.subject	Electronics industry	en_US
dc.subject	Information Systems	en_US
dc.subject	Communication industry	en_US
dc.title	The Effects of Varying Tilt Angle of Halo Implant on the Performance of Sub 100nm LAC MOSFETs	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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