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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Rao, V. Ramgopal | - |
| dc.date.accessioned | 2023-11-06T06:09:29Z | - |
| dc.date.available | 2023-11-06T06:09:29Z | - |
| dc.date.issued | 2004-12 | - |
| dc.identifier.uri | https://ieeexplore.ieee.org/document/1497814 | - |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12864 | - |
| dc.description.abstract | Hotwire CVD (HWCVD) deposited silicon rich nitride films were treated with O/sub 2/ plasma using RF plasma setup. The thickness of this oxynitride film was measured using spectroscopic ellipsometry. The film was treated with [3-(2-aminoethyl) aminopropyl]-trimethoxysilane (AEAPS) followed by immobilization of human immunoglobulin (HIgG) on it. Surface morphology at various stages of experimentation was studied using AFM. Antibody immobilized surface is further investigated using fluorescence microscopy. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject | EEE | en_US |
| dc.subject | Silicon | en_US |
| dc.subject | Semiconductor films | en_US |
| dc.subject | Plasma measurements | en_US |
| dc.subject | Surface morphology | en_US |
| dc.subject | Surface treatment | en_US |
| dc.subject | Radio frequency | en_US |
| dc.subject | Thickness measurement | en_US |
| dc.title | Anhydrous silanization and antibody immobilization on hotwire CVD deposited silicon oxynitride films | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Department of Electrical and Electronics Engineering | |
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