Sub-threshold Swing Degradation due to Localized Charge Storage in SONOS Memories

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-11-06T06:50:12Z	-
dc.date.available	2023-11-06T06:50:12Z	-
dc.date.issued	2004-07	-
dc.identifier.uri	https://ieeexplore.ieee.org/document/1345613	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12867	-
dc.description.abstract	This paper discusses the effect of localized charge storage on sub-threshold swing and threshold voltage in silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory cells. By analyzing the change in potential contours, it has been shown that the change in sub-threshold swing is correlated to fringing of electric field lines, and hence to the gate-to-substrate capacitance.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	Degradation	en_US
dc.subject	SONOS devices	en_US
dc.subject	Threshold voltage	en_US
dc.subject	Random access memory	en_US
dc.subject	Capacitance	en_US
dc.subject	Nonvolatile memory	en_US
dc.subject	Leakage current	en_US
dc.subject	Power dissipation	en_US
dc.title	Sub-threshold Swing Degradation due to Localized Charge Storage in SONOS Memories	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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