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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12867| Title: | Sub-threshold Swing Degradation due to Localized Charge Storage in SONOS Memories |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE Degradation SONOS devices Threshold voltage Random access memory Capacitance Nonvolatile memory Leakage current Power dissipation |
| Issue Date: | Jul-2004 |
| Publisher: | IEEE |
| Abstract: | This paper discusses the effect of localized charge storage on sub-threshold swing and threshold voltage in silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory cells. By analyzing the change in potential contours, it has been shown that the change in sub-threshold swing is correlated to fringing of electric field lines, and hence to the gate-to-substrate capacitance. |
| URI: | https://ieeexplore.ieee.org/document/1345613 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12867 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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