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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12868| Title: | Understanding the NBTI Degradation in Halo- Doped Channel p-MOSFETs |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE Niobium compounds Titanium compounds Degradation MOSFET circuits Interface states Stress |
| Issue Date: | Jul-2004 |
| Publisher: | IEEE |
| Abstract: | The role of initial interface damage for negative bias temperature instability (NBTI) degradation has been examined for short channel MOSFET devices. In this paper we present a detailed study of the role of initial silicon-oxide interface quality on the NBTI degradation. Hole density and oxide fields are important parameters responsible for NBTI degradation. Our results show that NBTI degradation is independent of initial interface quality. |
| URI: | https://ieeexplore.ieee.org/document/1345639 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12868 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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