Understanding the NBTI Degradation in Halo- Doped Channel p-MOSFETs

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-11-06T06:52:40Z	-
dc.date.available	2023-11-06T06:52:40Z	-
dc.date.issued	2004-07	-
dc.identifier.uri	https://ieeexplore.ieee.org/document/1345639	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12868	-
dc.description.abstract	The role of initial interface damage for negative bias temperature instability (NBTI) degradation has been examined for short channel MOSFET devices. In this paper we present a detailed study of the role of initial silicon-oxide interface quality on the NBTI degradation. Hole density and oxide fields are important parameters responsible for NBTI degradation. Our results show that NBTI degradation is independent of initial interface quality.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	Niobium compounds	en_US
dc.subject	Titanium compounds	en_US
dc.subject	Degradation	en_US
dc.subject	MOSFET circuits	en_US
dc.subject	Interface states	en_US
dc.subject	Stress	en_US
dc.title	Understanding the NBTI Degradation in Halo- Doped Channel p-MOSFETs	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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