Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12874| Title: | Effect of programming biases on the reliability of CHE and CHISEL flash EEPROMs |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE Channel hot electron injection EPROM Degradation Nonvolatile memory Integrated circuit reliability Energy Consumption Threshold voltage |
| Issue Date: | 2003 |
| Publisher: | IEEE |
| Abstract: | The effect of programming biases on the cycling endurance of NOR flash EEPROMs is studied under CHE and CHISEL operation. CHE degradation increases at higher control gate bias (V/sub CG/) and is insensitive to changes in drain bias (V/sub D/) CHISEL degradation is insensitive to changes in both V/sub CG/, and V/sub D/. Furthermore, CHISEL always shows lower degradation when compared to CHE under identical bias and similar programming time. The possible physical mechanisms responsible for the above behavior are clarified by using full band Monte-Carlo simulations. |
| URI: | https://ieeexplore.ieee.org/document/1197802 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12874 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.