DSpace logo

Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12875
Title: The Impact of Channel Engineering on the Performance Reliability and Scaling of CHISEL NOR Flash EEPROMs
Authors: Rao, V. Ramgopal
Keywords: EEE
Reliability engineering
EPROM
Doping
Integrated circuit technology
Design engineering
Issue Date: Sep-2003
Publisher: IEEE
Abstract: The programming performance, cycling endurance and scaling of CHISEL NOR flash EEPROMs is studied for two different (halo and no-halo) channel engineering schemes. Programming speed under identical bias, bias requirements under similar programming time, cycling endurance and drain disturb are compared. The scaling properties of programming time (at a fixed bias), bias (at a fixed programming time) and program/disturb margin are studied as cell floating gate length is scaled. The relative merits of these channel engineering schemes are discussed from the viewpoint of futuristic CHISEL cell design.
URI: https://ieeexplore.ieee.org/document/1256933
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12875
Appears in Collections:Department of Electrical and Electronics Engineering

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.