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Title: | Thin film single halo (SH) SOI nMOSFETs - hot carrier reliability for mixed mode applications |
Authors: | Rao, V. Ramgopal |
Keywords: | EEE Transistors MOSFETs Hot carriers Impurities Semiconductor thin films |
Issue Date: | 2003 |
Publisher: | IEEE |
Abstract: | For the first time, we report a study on the hot carrier reliability performance of single halo (SH) thin film silicon-on-insulator (SOI) nMOSFETs for mixed signal applications. The single halo structure has a high pocket impurity concentration near the source end of the channel and a low impurity concentration in the rest of the channel. Besides having excellent DC output characteristics, better V/sub th/-L roll-off control, lower DIBL, higher breakdown voltages and kink free operation, these devices show higher AC transconductance, higher output resistance and better dynamic intrinsic gain (g/sub m/R/sub 0/). Experimental results show that SH SOI MOSFETs exhibit a lower hot carrier degradation in small-signal transconductance and dynamic output resistance, in comparison with the conventional (CON) homogeneously doped SOI MOSFETs. From 2D device simulations, the lower hot carrier degradation mechanism in SH-SOI MOSFETs is analyzed and compared with the conventional SOI MOSFETs. |
URI: | https://ieeexplore.ieee.org/document/1273241 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12876 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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