Suppression of boron penetration by hot wire CVD polysilicon

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-11-07T04:08:27Z	-
dc.date.available	2023-11-07T04:08:27Z	-
dc.date.issued	2002	-
dc.identifier.uri	https://ieeexplore.ieee.org/document/1025667	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12883	-
dc.description.abstract	In the current and future deep sub-micron technologies, boron penetration through the gate dielectric is a severe reliability concern for the dual gate CMOS technology. In this paper we report results of our attempts to exploit the potential of Hot Wire CVD (HWCVD) for depositing poly-Si gate for CMOS technology. The effect of grain size of poly-Si gate on boron penetration is studied by varying the poly-Si grain size through variation in the HWCVD parameters.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	Boron	en_US
dc.subject	Wire	en_US
dc.subject	CMOS technology	en_US
dc.subject	Grain size	en_US
dc.subject	CMOS process	en_US
dc.subject	Tungsten	en_US
dc.title	Suppression of boron penetration by hot wire CVD polysilicon	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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