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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12885| Title: | Optimization of Single Halo p-MOSFET Implant Parameters for Improved Analog Performance and Reliability |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE MOSFET circuits Implants Degradation Current measurement Analog circuits Stress measurement Voltage |
| Issue Date: | Sep-2002 |
| Publisher: | IEEE |
| Abstract: | Single halo (SH) MOSFETs are recently proposed for mixed signal applications in view of their superior analog performance such as gain, transconductance, output resistance etc [1]. In this work, we investigate the hot carrier degradation behaviour of SH and conventional p-MOSFETs using specific stress conditions appropriate for analog applications. The degradation of analog device parameters due to Cannel Hot carrier (CHC) stress and its implications on circuit operation are discussed. |
| URI: | https://ieeexplore.ieee.org/abstract/document/1503933 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12885 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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