Multi-Frequency Transconductance Technique for Interface Characterization of Deep Sub-Micron SOI-MOSFETs

Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12895

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-11-07T09:19:51Z	-
dc.date.available	2023-11-07T09:19:51Z	-
dc.date.issued	2001-07	-
dc.identifier.uri	https://www.sciencedirect.com/science/article/abs/pii/S0026271401000671	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12895	-
dc.description.abstract	A multi-frequency transconductance technique for interface characterization of sub-micron SOI–MOSFETs is implemented. This technique is shown to be highly suitable for interface characterization in SOI devices where conventional charge-pumping techniques cannot be applied. Using this multi-frequency technique, sub-micron SOI–MNSFETs with a SiN dielectric deposited by a novel jet-vapor-deposition (JVD) process are characterized. Results are compared with charge pumping results obtained on bulk MNSFETs with identically processed JVD nitrides.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.subject	EEE	en_US
dc.subject	SOI–MOSFETs	en_US
dc.subject	Jet-vapor-deposition (JVD)	en_US
dc.title	Multi-Frequency Transconductance Technique for Interface Characterization of Deep Sub-Micron SOI-MOSFETs	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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