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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12898| Title: | Reliability studies on sub 100 nm SOI-MNSFETs |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE MOSFETs Gate leakage Hot carriers Transconductance Thickness measurement Silicon |
| Issue Date: | 2000 |
| Publisher: | IEEE |
| Abstract: | SOI MNSFETs with channel lengths down to 100 nm and having a Jet Vapor Deposited (JVD) silicon nitride (Si/sub 3/N/sub 4/) gate dielectric are fabricated and characterized. The JVD MNSFETs show comparable performance in comparison to conventional SiO/sub 2/ SOI-MOSFETs, in terms of low gate leakage, Si/sub 3/N/sub 4//Si interface quality and I/sub on//I/sub off/ ratio. In addition, the MNSFETs show better hot carrier reliability compared to conventional MOSFETs. Our results explore the worthiness of JVD Si/sub 3/N/sub 4/ as gate dielectric for future low power ULSI applications. |
| URI: | https://ieeexplore.ieee.org/document/911895 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12898 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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