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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12899
Title: Low temperature Hot-Wire CVD nitrides for deep sub-micron CMOS technologies
Authors: Rao, V. Ramgopal
Keywords: EEE
HWCVD nitride
CMOS technologies
Issue Date: 2000
Publisher: The International Society for Optical Engineering
Abstract: In this work we report results on MNS capacitors with the silicon nitride films fabricated by using a novel Hot-Wire CVD technique. The dependence of deposition parameters on the film properties is looked into. Our electrical characterisation results on MNS capacitors show good oxide breakdown fields, and low leakage.
URI: http://repository.ias.ac.in/79796/
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12899
Appears in Collections:Department of Electrical and Electronics Engineering

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