Low temperature Hot-Wire CVD nitrides for deep sub-micron CMOS technologies

Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/12899

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-11-07T09:42:56Z	-
dc.date.available	2023-11-07T09:42:56Z	-
dc.date.issued	2000	-
dc.identifier.uri	http://repository.ias.ac.in/79796/	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12899	-
dc.description.abstract	In this work we report results on MNS capacitors with the silicon nitride films fabricated by using a novel Hot-Wire CVD technique. The dependence of deposition parameters on the film properties is looked into. Our electrical characterisation results on MNS capacitors show good oxide breakdown fields, and low leakage.	en_US
dc.language.iso	en	en_US
dc.publisher	The International Society for Optical Engineering	en_US
dc.subject	EEE	en_US
dc.subject	HWCVD nitride	en_US
dc.subject	CMOS technologies	en_US
dc.title	Low temperature Hot-Wire CVD nitrides for deep sub-micron CMOS technologies	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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