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http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/12901| Title: | Channel engineering for high speed sub-1.0 V power supply deep sub-micron CMOS |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE Power engineering and energy Power supplies Los Angeles Council MOSFETs DH-HEMTs MOS devices |
| Issue Date: | 1999 |
| Publisher: | IEEE |
| Abstract: | The effects of channel engineering on device performance have been extensively investigated. The lateral asymmetric channel (LAC) MOSFETs show significantly higher I/sub dsat/ and g/sub msat/, lower I/sub off/, and superior short-channel performance compared with double-halo (DH) and conventional MOSFETs by effectively utilizing the velocity overshoot effects. It is demonstrated that the device switching speed of the LAC device at V/sub DD/=0.6 V is equivalent to that of a conventional device operated at V/sub DD/=1.5 V. |
| URI: | https://ieeexplore.ieee.org/document/799344 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12901 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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