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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Rao, V. Ramgopal | - |
| dc.date.accessioned | 2023-11-07T10:35:24Z | - |
| dc.date.available | 2023-11-07T10:35:24Z | - |
| dc.date.issued | 1999 | - |
| dc.identifier.uri | http://ieeexplore.ieee.org/iel5/10061/32274/01505572.pdf | - |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12902 | - |
| dc.description.abstract | Metal-Nitride-Semiconductor f"'En:" with channel lengths down to 100 nm and a novel .leI Vapor f)eposited (JVD) SiN gate dielectric are fabricated and characterized for their hot-carrier reliability. A novel charge pumping technique is employed to characterize the stress induced interface degradation (?f such MN5WETs' in comparison to MOSJ-1n:\, having thermal Si(h gale oxide. Under identical substrate current during stress, MNSFE1's show less inte1jcu:e-state generation and resulting drain current degradation jbr various channel lengths, stress time and supply voltage. The time and vollage dependence of hot-carrier degradation has been found (0 he distinctly dtferent for MN.)'F'ETs compared (0 conventional Si02 MOSFET'i. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject | EEE | en_US |
| dc.subject | Pumping technique | en_US |
| dc.subject | Metal-Nitride-Semiconductor | en_US |
| dc.title | Hot-Carrier Induced Interface Degradation in Jet Vapor Deposited SiN MNSFETs as Studied by a Novel Charge Pumping Technique | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Department of Electrical and Electronics Engineering | |
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