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http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/12903| Title: | Capacitance Degradation due to Fringing Field in Deep Sub-Micron MOSFETs with High-K Gate Dielectrics |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE Capacitance Degradation MOSFETs Dielectrics and electrical insulation High-K gate dielectrics Gate leakage MOS devices |
| Issue Date: | Sep-1999 |
| Publisher: | IEEE |
| Abstract: | High-K gate dielectrics have been under extensive investigation for use in sub-lOOnm MOSFETs to suppress gate leakage. However, thicker gate dielectrics can result in degradation of the electrical performance due to increased fringing fields from the gate to source/drain. In this paper, the capacitance degradation resulting from this effect is analyzed and a simple technique to model this effect is presented. |
| URI: | https://ieeexplore.ieee.org/document/1505464 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12903 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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