Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/12904| Title: | Plasma process induced abnormal 1/f noise behavior in deep sub-micron MOSFETs |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE Plasma properties Voltage Degradation Plasma materials processing Etching Noise figure |
| Issue Date: | 1998 |
| Publisher: | IEEE |
| Abstract: | The effect of plasma damage on the MOSFET's flicker noise properties is examined in this work. We observe an abnormal noise peak in the 1/f noise spectrum at around 2 kHz which is a characteristic of the plasma damage. The dependence of the noise peak on the plasma induced degradation was studied in virgin n- and p-channel MOSFETs and this peak is shown to correlate well with the amount of damage in the p-MOSFETs. |
| URI: | https://ieeexplore.ieee.org/document/725590 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12904 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.