Plasma process induced abnormal 1/f noise behavior in deep sub-micron MOSFETs

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-11-07T10:50:26Z	-
dc.date.available	2023-11-07T10:50:26Z	-
dc.date.issued	1998	-
dc.identifier.uri	https://ieeexplore.ieee.org/document/725590	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12904	-
dc.description.abstract	The effect of plasma damage on the MOSFET's flicker noise properties is examined in this work. We observe an abnormal noise peak in the 1/f noise spectrum at around 2 kHz which is a characteristic of the plasma damage. The dependence of the noise peak on the plasma induced degradation was studied in virgin n- and p-channel MOSFETs and this peak is shown to correlate well with the amount of damage in the p-MOSFETs.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	Plasma properties	en_US
dc.subject	Voltage	en_US
dc.subject	Degradation	en_US
dc.subject	Plasma materials processing	en_US
dc.subject	Etching	en_US
dc.subject	Noise figure	en_US
dc.title	Plasma process induced abnormal 1/f noise behavior in deep sub-micron MOSFETs	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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