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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12907| Title: | The Planar-Doped-Barrier FET:MOSFET Overcomes Conventional Limitations |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE MOSFETs |
| Issue Date: | Oct-1997 |
| Publisher: | IEEE |
| Abstract: | Introducing a concept of Electric-Field-Tailoring in vertical grown MOSFETs significant improvements concerning supply voltage, current and speed are possible. Based on vertical Silicon MOSFETs with sub-100nm channel lengths Planar-Doped-BarrierFETs were fabricated. Investigations on electrical characteristics and carrier transport show the predicted improvements compared to classical MOSFETs. |
| URI: | 10.1109/ESSDERC.1997.194506 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12907 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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