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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12908| Title: | Simulation, fabrication and characterization of high performance planar-doped-barrier sub 100 nm channel MOSFETs |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE Fabrication MOSFETs Molecular beam epitaxial growth Doping profiles Hot carriers CMOS technology |
| Issue Date: | Dec-1997 |
| Publisher: | IEEE |
| Abstract: | In this paper we present experimental and simulation results on planar-doped-barrier MOSFETs (PDBFETs) and show the advantages that arise from the channel delta doping. Early and higher magnitude of velocity overshoot, suppression of avalanche multiplication, reduced hot-carrier problems are some of the advantages offered by PDBFETs over the conventional homogeneously doped MOSFETs in the sub 100 nm regime. Our low-temperature characterizations show clear ballistic transport in the fabricated 85 nm channel MOSFETs. |
| URI: | https://ieeexplore.ieee.org/document/650505 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12908 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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