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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12909
Title: Radiation Induced Interface State Generation in Nitrided and Reoxidized Nitrided Gate Oxides
Authors: Rao, V. Ramgopal
Keywords: EEE
Reoxidized nitrided SiO2
Nitrided oxides
Issue Date: Jan-1992
Publisher: AIP
Abstract: Reoxidized nitrided oxide is compared with nitrided oxides and dry SiO2 for radiation‐induced interface‐state generation (ΔDitm) and midgap voltage shifts (ΔVmg). The suppression of ΔDitm observed with heavy nitridation or reoxidation is explained in terms of the trapped‐hole recombination model together with the shifting of the location of the trapped positive charge away from the Si interface. This model can also explain the effect of nitrogen annealing on nitrided oxides.  
URI: https://pubs.aip.org/aip/jap/article-abstract/71/2/1029/394576/Radiation-induced-interface-state-generation-in?redirectedFrom=fulltext
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12909
Appears in Collections:Department of Electrical and Electronics Engineering

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