Radiation Induced Interface State Generation in Nitrided and Reoxidized Nitrided Gate Oxides

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-11-08T05:35:14Z	-
dc.date.available	2023-11-08T05:35:14Z	-
dc.date.issued	1992-01	-
dc.identifier.uri	https://pubs.aip.org/aip/jap/article-abstract/71/2/1029/394576/Radiation-induced-interface-state-generation-in?redirectedFrom=fulltext	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12909	-
dc.description.abstract	Reoxidized nitrided oxide is compared with nitrided oxides and dry SiO2 for radiation‐induced interface‐state generation (ΔDitm) and midgap voltage shifts (ΔVmg). The suppression of ΔDitm observed with heavy nitridation or reoxidation is explained in terms of the trapped‐hole recombination model together with the shifting of the location of the trapped positive charge away from the Si interface. This model can also explain the effect of nitrogen annealing on nitrided oxides.	en_US
dc.language.iso	en	en_US
dc.publisher	AIP	en_US
dc.subject	EEE	en_US
dc.subject	Reoxidized nitrided SiO2	en_US
dc.subject	Nitrided oxides	en_US
dc.title	Radiation Induced Interface State Generation in Nitrided and Reoxidized Nitrided Gate Oxides	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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