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DC Field | Value | Language |
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dc.contributor.author | Manjuladevi, V. | - |
dc.contributor.author | Gupta, Raj Kumar | - |
dc.date.accessioned | 2024-02-16T09:49:00Z | - |
dc.date.available | 2024-02-16T09:49:00Z | - |
dc.date.issued | 2020-10 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/abstract/document/9186309 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14306 | - |
dc.description.abstract | Fabrication of zinc oxide (ZnO)-based p-n homojunction by depositing undoped p-ZnO nanoparticles (NPs) over electrodeposited n-ZnO hexagonal nanotube (NT) array is reported. Field emission scanning electron microscopy (FESEM) confirmed the formation of homojunction, while X-ray diffraction authenticated the crystallinity of the homojunction and its constituents. The conductivity type of the n- and p-type ZnO was ascertained by the Mott–Schottky plot obtained from electrochemical impedance spectroscopy (EIS) measurements. The fabricated p-n homojunction showed green luminescence emission (not shown in the case of only p- or n-ZnO) in the visible range, which was confirmed by the photoluminescence (PL) study. Au/p-ZnO NPs/n-ZnO NTs/Au offered a cut-in voltage of 0.45–0.33 V and a breakdown voltage of ~−2.68 V in the temperature range of 25–75 °C, as revealed from the I – V and C – V measurements | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | Physics | en_US |
dc.subject | Electrical characterizations | en_US |
dc.subject | Zinc oxide (ZnO) | en_US |
dc.subject | Field emission scanning electron microscopy (FESEM) | en_US |
dc.title | Fabrication, Structural, Electrical, and Optical Characterizations of p-Nanoparticle- and n-Nanotube-Based ZnO Homojunction | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Physics |
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