Temperature dependent band gap shrinkage in GaN: Role of electron–phonon interaction

Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/14374

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DC Field	Value	Language
dc.contributor.author	Sarkar, Niladri	-
dc.date.accessioned	2024-02-20T10:10:54Z	-
dc.date.available	2024-02-20T10:10:54Z	-
dc.date.issued	2009-08	-
dc.identifier.uri	https://www.sciencedirect.com/science/article/pii/S0038109809002683	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14374	-
dc.description.abstract	We present an experimental investigation of temperature dependent band-gap shrinkage in GaN using photoluminescence spectroscopy. The near-band-edge transition energy shifts to lower energy with increasing temperature. The parameters that describe the temperature-dependent red-shift of the band-edge transition energy are evaluated using different models. It has been found that the semi-empirical relation based on phonon-dispersion related spectral function leads to an excellent fit to the experimental data.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.subject	Physics	en_US
dc.subject	A. GaN	en_US
dc.subject	D. Band gap	en_US
dc.subject	E. Photoluminscence	en_US
dc.title	Temperature dependent band gap shrinkage in GaN: Role of electron–phonon interaction	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Physics

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