The temperature dependence of the band gap shrinkage due to the electron–phonon interaction in AlxGa1−xAs

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DC Field	Value	Language
dc.contributor.author	Sarkar, Niladri	-
dc.date.accessioned	2024-02-20T10:15:28Z	-
dc.date.available	2024-02-20T10:15:28Z	-
dc.date.issued	2006-01	-
dc.identifier.uri	https://iopscience.iop.org/article/10.1088/0953-8984/18/5/021/meta	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14376	-
dc.description.abstract	The photoluminescence spectrum of band edge transitions in AlxGa1−xAs is studied as a function of temperature and electron concentration. The parameters that describe the temperature dependence redshift of the band edge transition energy are evaluated using different models. We find that a semi-empirical relation based on a phonon dispersion related spectral function leads to an excellent fit to the experimental data.	en_US
dc.language.iso	en	en_US
dc.publisher	IOP	en_US
dc.subject	Physics	en_US
dc.subject	Electron–phonon	en_US
dc.subject	AlxGa1−xAs	en_US
dc.subject	Photoluminescence	en_US
dc.title	The temperature dependence of the band gap shrinkage due to the electron–phonon interaction in AlxGa1−xAs	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Physics

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