Grain-boundary-controlled current transport in copper phthalocyanine

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DC Field	Value	Language
dc.contributor.author	Sarkar, Niladri	-
dc.date.accessioned	2024-02-20T10:28:54Z	-
dc.date.available	2024-02-20T10:28:54Z	-
dc.date.issued	2006-04	-
dc.identifier.uri	https://pubs.aip.org/aip/apl/article/88/16/162110/152605	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14377	-
dc.description.abstract	Anomalous temperature dependence of resistivity at low temperature is observed in copper-phthallocyanine thin film. A model based on grain-boundary-controlled transport has been developed for the explanation of the observed anomaly. The prediction is based on the assumption that the thin film beyond a certain thickness is mainly polycrystalline, consisting of grains. The transport is expected to be limited by potential barriers at grain boundaries.	en_US
dc.language.iso	en	en_US
dc.publisher	AIP	en_US
dc.subject	Physics	en_US
dc.subject	Transport properties	en_US
dc.subject	Electrical properties and parameters	en_US
dc.subject	Light emitting diodes	en_US
dc.subject	Crystallographic defects	en_US
dc.subject	Thin films	en_US
dc.subject	Potential energy barrier	en_US
dc.title	Grain-boundary-controlled current transport in copper phthalocyanine	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Physics

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