Understanding the effect of inelastic electron-phonon scattering and channel inhomogeneities on a nanowire FET

Abstract

Using self-consistent Non-Equilibrium Green's Function formalism, the effect of the inelastic scattering due to electron-phonon interaction on the transfer and output characteristics of a coaxially gated generic nanowire field effect transistor has been studied in detail. The scattering strength Do is varied from 0.003 eV2 to 0.3 eV2. There is change in the threshold voltage and suppression of channel current with increasing scattering strength. We also studied the effect of channel inhomogeneities on electron energy. The channel inhomogeneities are invoked by introducing potential step inside the channel. We study the energy relaxation due to inelastic scattering and channel inhomogeneities by comparing the normalized terminal current per energy for the source and drain terminals.