Size quantization effect in the channel of a 2D nano scale dual gate MOSFET

Abstract

In this work, we studied the size quantization effects in the channel of a low dimensional MOSFET using a Self-Consistent Quantum Method where Schrodinger-Poisson equations are solved for determining the electron density for 3nm × 3nm and 12nm×12nm 2D channels. The 3nm×3nm channel MOSFET show the peak of the electron density at the middle whereas the 12nmξ12nm channel MOSFET shows the accumulation of the electrons at the oxide/semiconductor interface. The electron density in the channel is obtained using density matrix formalism from the density matrix ⁠. A block diagonal Hamiltonian Matrix [H] is constructed for the oxide/channel/oxide 2D structure for the dual gate MOSFET. This structure is discretized and Finite-Difference method is used for constructing the matrix equation. We also show the effect of effective mass on the overall channel electron density distribution. This analysis is very important and gives an understanding of the Physics of the channel electron density for Nano-Scale Devices