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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14403
Title: Carbon Nanotube Field Effect Transistor: Basic Characterization and Effect of High Dielectric Material
Authors: Mishra, Rashmi Ranjan
Keywords: Physics
Nanotubes
Transistors
MOSFET dimensional scaling
Characteristic curve
Dielectric materials
Saturation current
Issue Date: Nov-2009
Publisher: IJRTE
Abstract: As the scaling of Si MOSFET approaches towards its limiting value, new alternatives are coming up to overcome these limitations. Carbon nanotube field effect transistor (CNTFET) is found to be one of the most promising alternatives for bulk Si MOSFET. In this work we have simulated a cylindrical CNTFET. Based on the simulation results both output and transfer characteristic curves are plotted and analyzed. We have also studied the effect of different dielectric materials used as gate insulator.
URI: https://www.proquest.com/openview/27e262be6aa7cea525b01e32d4f50b76/1?cbl=136092&pq-origsite=gscholar&parentSessionId=gJKETeOej9in0yDpX4PMKw7xdCdKrtOyBrFLjIZkBEU%3D
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14403
Appears in Collections:Department of Physics

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