Carbon Nanotube Field Effect Transistor: Basic Characterization and Effect of High Dielectric Material

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DC Field	Value	Language
dc.contributor.author	Mishra, Rashmi Ranjan	-
dc.date.accessioned	2024-02-21T10:04:19Z	-
dc.date.available	2024-02-21T10:04:19Z	-
dc.date.issued	2009-11	-
dc.identifier.uri	https://www.proquest.com/openview/27e262be6aa7cea525b01e32d4f50b76/1?cbl=136092&pq-origsite=gscholar&parentSessionId=gJKETeOej9in0yDpX4PMKw7xdCdKrtOyBrFLjIZkBEU%3D	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14403	-
dc.description.abstract	As the scaling of Si MOSFET approaches towards its limiting value, new alternatives are coming up to overcome these limitations. Carbon nanotube field effect transistor (CNTFET) is found to be one of the most promising alternatives for bulk Si MOSFET. In this work we have simulated a cylindrical CNTFET. Based on the simulation results both output and transfer characteristic curves are plotted and analyzed. We have also studied the effect of different dielectric materials used as gate insulator.	en_US
dc.language.iso	en	en_US
dc.publisher	IJRTE	en_US
dc.subject	Physics	en_US
dc.subject	Nanotubes	en_US
dc.subject	Transistors	en_US
dc.subject	MOSFET dimensional scaling	en_US
dc.subject	Characteristic curve	en_US
dc.subject	Dielectric materials	en_US
dc.subject	Saturation current	en_US
dc.title	Carbon Nanotube Field Effect Transistor: Basic Characterization and Effect of High Dielectric Material	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Physics

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