Formation of Monolayer Graphene by Annealing Sacrificial Nickel Thin Films

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DC Field	Value	Language
dc.contributor.author	Gangopadhyay, Subhashis	-
dc.date.accessioned	2024-03-05T09:49:39Z	-
dc.date.available	2024-03-05T09:49:39Z	-
dc.date.issued	2009-09	-
dc.identifier.uri	https://pubs.acs.org/doi/full/10.1021/jp906066z	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14526	-
dc.description.abstract	Graphene films have been formed by annealing Ni thin films at 800 °C under vacuum conditions. The Ni thin films are deposited on Si/SiO2 and, following annealing, have a polycrystalline morphology with grain sizes on the order of 1 μm. Following growth, the Ni is removed by etching, and the graphene is transferred as a single continuous layer onto a separate surface. The fraction of monolayer graphene is investigated using optical and electron microscopy and Raman spectroscopy and is shown to be >75%.	en_US
dc.language.iso	en	en_US
dc.publisher	ACS	en_US
dc.subject	Physics	en_US
dc.subject	Annealing (metallurgy)	en_US
dc.subject	Layers	en_US
dc.subject	Thin films	en_US
dc.subject	Two dimensional materials	en_US
dc.title	Formation of Monolayer Graphene by Annealing Sacrificial Nickel Thin Films	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Physics

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