A novel approach for the growth of InGaN quantum dots

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DC Field	Value	Language
dc.contributor.author	Gangopadhyay, Subhashis	-
dc.date.accessioned	2024-03-06T05:34:31Z	-
dc.date.available	2024-03-06T05:34:31Z	-
dc.date.issued	2006-11	-
dc.identifier.uri	https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.200671592	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14540	-
dc.description.abstract	A novel two-step growth method for creating InGaN quantum dots (QDs) was developed by using a combination of an Inx Ga1–x N nucleation layer with a platelet structure and an Iny Ga1–y N formation layer with an indium content lower than that of the Inx Ga1–x N nucleation layer. The realized QDs were investigated by micro-photoluminescence measurements. We observed sharp emission lines at 4 K with a spectral width down to the spectral resolution limit of the experimental setup of 0.17 meV. This growth concept is discussed in comparison with conventional growth method	en_US
dc.language.iso	en	en_US
dc.publisher	Wiley	en_US
dc.subject	Physics	en_US
dc.subject	InGaN quantum dots	en_US
dc.title	A novel approach for the growth of InGaN quantum dots	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Physics

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