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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/14540
Title: A novel approach for the growth of InGaN quantum dots
Authors: Gangopadhyay, Subhashis
Keywords: Physics
InGaN quantum dots
Issue Date: Nov-2006
Publisher: Wiley
Abstract: A novel two-step growth method for creating InGaN quantum dots (QDs) was developed by using a combination of an Inx Ga1–x N nucleation layer with a platelet structure and an Iny Ga1–y N formation layer with an indium content lower than that of the Inx Ga1–x N nucleation layer. The realized QDs were investigated by micro-photoluminescence measurements. We observed sharp emission lines at 4 K with a spectral width down to the spectral resolution limit of the experimental setup of 0.17 meV. This growth concept is discussed in comparison with conventional growth method
URI: https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.200671592
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14540
Appears in Collections:Department of Physics

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