Adsorbate induced self-ordering of germanium nanoislands on Si(113)

Abstract

The impact of Ga preadsorption on the spatial correlation of nanoscale three-dimensional (3D) Ge-islands has been investigated by low-energy electron microscopy and low-energy electron diffraction. Submonolayer Ga adsorption leads to the formation of a 2D chemical nanopattern, since the Ga-terminated (2×2) domains exclusively decorate the step edges of the Si(113) substrate. Subsequent Ge growth on such a partially Ga-covered surface results in Ge 3D islands with an increased density as compared to Ge growth on clean Si(113). However, no pronounced alignment of the Ge islands is observed. Completely different results are obtained for Ga saturation coverage, which results in the formation of (112) and (115) facets regularly arranged with a periodicity of about 40 nm. Upon Ge deposition, Ge islands are formed at a high density of about 1.3×1010 cm−2. These islands are well ordered as they align at the substrate facets. Moreover, the facet array induces a reversal of the Ge islands' shape anisotropy as compared to growth on planar Si(113) substrates.