qPlus atomic force microscopy of the Si(100) surface: Buckled, split-off, and added dimers

Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/14548

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DC Field	Value	Language
dc.contributor.author	Gangopadhyay, Subhashis	-
dc.date.accessioned	2024-03-06T09:51:40Z	-
dc.date.available	2024-03-06T09:51:40Z	-
dc.date.issued	2009-08	-
dc.identifier.uri	https://pubs.aip.org/aip/apl/article/95/6/063112/338392	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14548	-
dc.description.abstract	Dimer configurations at the Si(100) surface have been studied with noncontact atomic force microscopy in the qPlus mode at 77 K, using both large (10 nm peak to peak) and small (0.5 nm peak to peak) oscillation amplitudes. In addition to the ⁠, ⁠, and reconstructions of the pristine surface, a variety of defect types including ad-dimers, vacancies, and split-off dimers have been imaged. Our data appear at odds with the currently accepted structural model for split-off dimers. At low oscillation amplitudes the degree of apparent dimer buckling can be “tuned” by varying the frequency shift set point.	en_US
dc.language.iso	en	en_US
dc.publisher	AIP	en_US
dc.subject	Physics	en_US
dc.subject	Ab-initio methods	en_US
dc.subject	Density Functional Theory (DFT)	en_US
dc.subject	Doping	en_US
dc.subject	Electronic transport	en_US
dc.subject	Tuning forks	en_US
dc.subject	Atomic force microscopy (AFM)	en_US
dc.subject	Scanning Tunneling Microscopy (STM)	en_US
dc.subject	Fourier analysis	en_US
dc.title	qPlus atomic force microscopy of the Si(100) surface: Buckled, split-off, and added dimers	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Physics

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