Growth and formation of InGaN and GaN nano-structures studied by STM

Abstract

Growth and morphology of metal organic vapour phase epitaxy (MOVPE) deposited InGaN nano-islands and molecular beam epitaxy (MBE) grown GaN films on GaN(0001) template layers on sapphire substrates have been investigated using scanning tunneling microscopy. For MOVPE InGaN growth, the nucleation of self-organized nano-structures can be achieved by a careful choice of the growth temperature, the In partial pressure, the growth rate and V/III flux ratio. For growth at 650°C, large spiral disc-like islands are found, preferentially nucleating at GaN substrate defects. At 600°C, islands of smaller average size are observed. Lowering the In flux at this temperature, a homogeneous nucleation of small quantum dot like islands with a density of 1012/cm2 is found. For homoepitaxial MBE growth of thin GaN layers on GaN templates, a layer-by-layer growth mode is observed for Ga rich growth conditions. For growth at 750°C, an atomically resolved 4×4 surface reconstruction with a high defect density is found in the initial growth stage. However, subsequent growth at 790°C leads to the formation of one dimensional nanoclusters of about 3 nm lateral spacing. For GaN growth at a lower Ga-flux, a rougher surface morphology and three dimensional growth is observed. Independent on the Ga flux, one-dimensional nanostructures appear after prolonged growth at higher temperature, which are attribute to the impact of ions emerging from the N-plasma.