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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/15150
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dc.contributor.authorGhosh, Sarbani-
dc.date.accessioned2024-08-08T06:34:23Z-
dc.date.available2024-08-08T06:34:23Z-
dc.date.issued2015-10-
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0925963515300352-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/15150-
dc.description.abstractWe present molecular dynamics (MD) simulations and density functional theory (DFT) calculations of hydrogen adsorption on single-walled carbon nanotubes (SWCNT) with various kinds of defects. The nature of defects, which is characterized here by the number of carbon atoms present in a ring on the surface of nanotube, plays a significant role in determining the hydrogen adsorption capacity of the SWCNT. Nanotubes containing the Stone–Wales defect with 5 and 8-member rings were found to have the largest hydrogen adsorption ability that increases further with the number of rings with such defects. Whereas, the presence of defects with 5, 3-5-8-member rings and the Stone–Wales defect with 5 and 7-member rings decreases the adsorption ability of the defective SWCNT significantly with respect to defect-free nanotubes. Our results indicate that the huge discrepancies in hydrogen storage capacities of SWCNT reported in the literature could be attributed to the nature of defects present in nanotubes. DFT calculations also reveal that the adsorption energy depends not only on the nature and number of defects present on the surface of nanotube but also on the equilibrium structure of rings.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectChemical Engineeringen_US
dc.subjectHydrogen adsorptionen_US
dc.subjectCarbon nanotubes (CNTs)en_US
dc.subjectMolecular dynamicsen_US
dc.subjectDensity Functional Theory (DFT)en_US
dc.titleAdsorption of hydrogen on single-walled carbon nanotubes with defectsen_US
dc.typeArticleen_US
Appears in Collections:Department of Chemical Engineering

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