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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hazra, Arnab | - |
dc.date.accessioned | 2024-11-30T04:30:58Z | - |
dc.date.available | 2024-11-30T04:30:58Z | - |
dc.date.issued | 2022-02 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S0167931722000132 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/16540 | - |
dc.description.abstract | In the current study, graphene oxide (GO), uniformly loaded with different noble metal nanoparticles (Au, Pd and Pt) were synthesized by spray coating technique and implemented in field effect transistor (FET) sensors. The morphology, structure, composition and electronic properties of the synthesized materials were characterized. The sensing results indicated that the incorporation of noble metals can greatly enhance the VOC sensing properties of a few layers of GO by using their chemical and electrical sensitization effect. At optimized gate potential, GO FET exhibited outstanding sensing properties at low operating temperature i.e. 50 °C. Specifically, the FET sensor based on Pd loaded GO exhibited the highest response, quickest response/recovery (37 s/91 s) characteristics, best selectivity and low operating temperature towards low concentration of acetone. Almost five times higher sensitivity towards acetone (400 ppb) was achieved in Pd/GO as compared to the pure GO channel nanoparticles under a suitable back gate bias. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.subject | EEE | en_US |
dc.subject | Hybrid graphene oxide (GO) | en_US |
dc.subject | Field effect transistor (FET) | en_US |
dc.subject | Sensors | en_US |
dc.subject | Nanoparticles | en_US |
dc.title | Realization of ppb-level acetone detection using noble metals (Au, Pd, Pt) nanoparticles loaded GO FET sensors with simultaneous back-gate effect | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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