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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/16540
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dc.contributor.authorHazra, Arnab-
dc.date.accessioned2024-11-30T04:30:58Z-
dc.date.available2024-11-30T04:30:58Z-
dc.date.issued2022-02-
dc.identifier.urihttps://www.sciencedirect.com/science/article/abs/pii/S0167931722000132-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/16540-
dc.description.abstractIn the current study, graphene oxide (GO), uniformly loaded with different noble metal nanoparticles (Au, Pd and Pt) were synthesized by spray coating technique and implemented in field effect transistor (FET) sensors. The morphology, structure, composition and electronic properties of the synthesized materials were characterized. The sensing results indicated that the incorporation of noble metals can greatly enhance the VOC sensing properties of a few layers of GO by using their chemical and electrical sensitization effect. At optimized gate potential, GO FET exhibited outstanding sensing properties at low operating temperature i.e. 50 °C. Specifically, the FET sensor based on Pd loaded GO exhibited the highest response, quickest response/recovery (37 s/91 s) characteristics, best selectivity and low operating temperature towards low concentration of acetone. Almost five times higher sensitivity towards acetone (400 ppb) was achieved in Pd/GO as compared to the pure GO channel nanoparticles under a suitable back gate bias.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectEEEen_US
dc.subjectHybrid graphene oxide (GO)en_US
dc.subjectField effect transistor (FET)en_US
dc.subjectSensorsen_US
dc.subjectNanoparticlesen_US
dc.titleRealization of ppb-level acetone detection using noble metals (Au, Pd, Pt) nanoparticles loaded GO FET sensors with simultaneous back-gate effecten_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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