AlN/β-Ga2O3 HEMT for Low-Noise Amplifier

Abstract

This study proposes an AlN/β-Ga2O3 high electron mobility transistor (HEMT) using a 0.10 µm gate length where AIN is used as a barrier and β-Ga2O3 as a channel material. DC and Noise characteristics of AlN/Ga2O3 with different AIN barrier thicknesses at 1–20 GHz microwave frequencies have been explored. The simulation has been performed using the Silvaco TCAD software. The device has exhibited a high unity current gain cut-off frequency (ft) of 100 GHz and extrinsic transconductance of 255 mS/mm. Also, the device showed current drive capability as high as 2000 mA/mm. The microwave noise characteristics of the device were investigated from 0 to 20 GHz with respect to different gate bias voltages and drain currents. At a gate bias of −2 V and drain bias of 15 V, the device has shown a minimum noise figure (Fmin) of 0.71 dB and max unilateral power gain (GUmax) of 24 dB at 10 GHz. Also, it shows a noise resistance of 47.94 KΏ at 10 GHz, which is very appropriate for low-noise applications in the X-band frequency range. These findings indicate the expertise of AlN/Ga2O3 in the field of low-noise and high-power amplifiers.